Datasheet4U Logo Datasheet4U.com

IRF6623TRPBF - HEXFET Power MOSFET

Datasheet Summary

Description

The IRF6623PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

Features

  • d(off) tf Fig 15a. Switching Time Test Circuit Fig 15b. Switching Time Waveforms Id Vds Vgs L 0 DUT 1K VCC Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 16a. Gate Charge Test Circuit Fig 16b. Gate Charge Waveform www. irf. com 5 IRF6623PbF D. U. T Driver Gate Drive + P. W. Period D= P. W. Period VGS=10V.
  • - www. datasheet4u. com + Circuit Layout Considerations.
  • Low Stray Inductance.
  • Ground Plane.
  • Low Leakage Inductance Current Transformer.
  • D. U. T. ISD Waveform.

📥 Download Datasheet

Datasheet preview – IRF6623TRPBF

📁 Similar Datasheet

Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
PD - 97085 IRF6623PbF IRF6623TRPbF RoHS Compliant ‰ Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs www.datasheet4u.com l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible ‰ l Compatible with existing Surface Mount Techniques ‰ l l DirectFET™ Power MOSFET Š VDSS 20V RDS(on) max 5.7mΩ@VGS = 10V 9.7mΩ@VGS = 4.5V Qg(typ.) 11nC ST Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details) SQ SX ST MQ MX MT DirectFET™ ISOMETRIC Description The IRF6623PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.
Published: |