Description
The IRF6626PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.
Features
- (on)
100µsec
10 1msec 10msec
1
0.1 Ta = 25°C Tj = 150°C Single Pulse
0.01
0.01
0.10
1.00
10.00 100.00
VDS, Drain-to-Source Voltage (V)
Fig11. Maximum Safe Operating Area
2.2
2.0
1.8
1.6 1.4 ID = 50µA
1.2
1.0
0.8
0.6 -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( °C )
Fig 13. Threshold Voltage vs. Temperature
ID TOP 5.6A
8.4A BOTTOM 13A
EAS , Single Pulse Avalanche Energy (mJ)
40
20
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0 25 50 75 100 125 150 Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Av.
IRF6626TRPbF Datasheet
