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IRF6626TRPbF Datasheet DirectFET Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Download the IRF6626TRPbF datasheet PDF. This datasheet also includes the IRF6626PbF variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IRF6626PbF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

General Description

The IRF6626PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.

The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

Overview

PD - 97218 IRF6626PbF IRF6626TRPbF l RoHs Compliant  l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 30V max ±20V max 4.0mΩ@ 10V 5.2mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 19nC 6.7nC 1.6nC 5.4nC 13nC 1.8V ST DirectFET™ ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.

Key Features

  • (on) 100µsec 10 1msec 10msec 1 0.1 Ta = 25°C Tj = 150°C Single Pulse 0.01 0.01 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V) Fig11. Maximum Safe Operating Area 2.2 2.0 1.8 1.6 1.4 ID = 50µA 1.2 1.0 0.8 0.6 -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( °C ) Fig 13. Threshold Voltage vs. Temperature ID TOP 5.6A 8.4A BOTTOM 13A EAS , Single Pulse Avalanche Energy (mJ) 40 20 www. irf. com 0 25 50 75 100 125 150 Starting TJ , Junction Temperature (°C) Fig 14. Maximum Av.

More Datasheets from International Rectifier (now Infineon)

Part Number Description
IRF6626 DirectFET Power MOSFET
IRF6626PbF DirectFET Power MOSFET
IRF6620 HEXFETPower MOSFET
IRF6620PBF Power MOSFET
IRF6620TRPBF Power MOSFET
IRF6621 Power MOSFET
IRF6621PbF Power MOSFET
IRF6621TRPbF Power MOSFET
IRF6622 DirectFET Power MOSFET
IRF6622PBF DirectFET Power MOSFET