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IRF6626 Datasheet DirectFET Power MOSFET

Manufacturer: International Rectifier (now Infineon)

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General Description

The IRF6626 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.

The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

Overview

www.DataSheet4U.com PD - 96976D IRF6626 DirectFET™ Power MOSFET ‚ RoHS compliant containing no lead or bromide  l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  l Ultra Low Package Inductance l Optimized for High Frequency Switching  l Ideal for CPU Core DC-DC Converters l Optimized for both Sync.

FET and some Control FET applications  l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques  l Typical values (unless otherwise specified) VDSS Qg tot VGS Qgd 6.7nC RDS(on) Qgs2 1.6nC RDS(on) Qoss 13nC 30V max ±20V max 4.0mΩ@ 10V 5.2mΩ@ 4.5V Qrr 5.4nC Vgs(th) 1.8V 19nC ST Applicable DirectFET Outline and Substrate Outline (see p.

Key Features

  • 0 0.01 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 80 VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 ID = 50µA 70 60 50 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) ID, Drain Current (A) -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 100 EAS , Single Pulse Avalanche Energy (mJ) Fig 13. Threshold Voltag.

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