IRF6637 Datasheet - International Rectifier

DirectFET Power MOSFET

IRF6637 Features

* 0.10 1.00 10.00 100.00 0.1 VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage Typical VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.5 60 50 ID, Drain Current (A) 40 30 20 10 0 25 50 75 100 125 150 TC , Case Temperature (°C) 2.0 ID =

IRF6637 General Description

The IRF6637 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used.

IRF6637 Datasheet (288.16 KB)

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IRF6637

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International Rectifier

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288.16 KB

Description:

Directfet power mosfet.
PD - 96968 www.DataSheet4U.com IRF6637 RDS(on) Qoss 9.9nC DirectFET Power MOSFET l l l l l l l l l Lead and Bromide Free Low Profile (<0.7 mm).

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IRF6637 DirectFET Power MOSFET International Rectifier

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IRF6637 Features

IRF6637 General Description

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