IRF6637TRPBF Datasheet | International Rectifier

Description The IRF6637Pb F bines the latest HEXFET® power MOSFET silicon technology with advanced Direct FETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The Direct FET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The Direct FET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6637Pb F balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6637Pb F has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including R DS(on) and gate charge to minimize losses in the control FET socket. Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM EAS IAR Typical R DS (on) (mΩ) Max. 30 ±20 14 11 59 110 31 11 VGS, Gate-to-Source Voltage (V) Units Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS Pulsed Drain Current Avalanche Current g e e @ 10V f h 12 10 8 6 4 2 0 0 4 8 ID= 11A Single Pulse Avalanche Energy Ãg m J A ID = 14A 20 15 TJ = 125°C 10 TJ = 25°C 5 2.0 4.0 6.0 8.0 VGS, Gate-to-Source Voltage (V) 10.0 VDS = 24V VDS= 15V Notes:  Click on this section to link to the appropriate technical paper. ‚ Click on this section to link to the Direct FET Website. - Surface mounted on 1 in. square Cu board, steady state. Fig 1. Typical...