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IRF6655PBF - DirectFET Power MOSFET

Description

The IRF6655PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest combined on-state resistance and gate charge in a package that has a footprint similar to that of a micro-8, and only 0.7mm profile.

Features

  • EA.

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Other Datasheets by International Rectifier (now Infineon)

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IRF6655 DirectFET Power MOSFET Typical values
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 97226A DirectFET™ Power MOSFET ‚ RoHs Compliant  l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for High Performance Isolated Converter Primary Switch Socket l Ideal for Control FET sockets in 36V-75V in Synchronous Buck applications l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  l IRF6655PbF IRF6655TRPbF www.DataSheet4U.com Typical values (unless otherwise specified) VDSS Qg tot VGS Qgd 2.8nC RDS(on) Qoss 4.5nC 100V max ±20V max 53mΩ@ 10V Qgs2 0.58nC Qrr 37nC Vgs(th) 4.0V 8.7nC SH MN DirectFET™ ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.
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