These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.
This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
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PD- 91844A
IRF7210
HEXFET® Power MOSFET
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Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel
S
1
8 7
A D D D D
S
S G
2
VDSS = -12V RDS(on) = 0.007Ω
3
6
4
5
T op V ie w
Description
These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.
IRF7210 Datasheet
