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International Rectifier Electronic Components Datasheet

IRF7303QPBF Datasheet

Power MOSFET

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l Advanced Process Technology
l Ultra Low On-Resistance
l Dual N Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l 150°C Operating Temperature
l Lead-Free
Description
These HEXFET® Power MOSFET's in a Dual SO-8 package
utilize the lastest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of
these HEXFET Power MOSFET's are a 150°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These benefits combine to
make this design an extremely efficient and reliable device
for use in a wide variety of applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space and is
also available in Tape & Reel.
PD - 96103A
IRF7303QPbF
HEXFET® Power MOSFET
S1 1
G1 2
8 D1
7 D1
VDSS = 30V
S2 3
G2 4
6 D2
5 D2 RDS(on) = 0.050
Top View
SO-8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ, TSTG
Parameter
10 Sec. Pulsed Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Thermal Resistance Ratings
Parameter
RθJA Maximum Junction-to-Ambient„
www.irf.com
Max.
5.3
4.9
3.9
20
2.0
0.016
± 20
5.0
-55 to + 150
Units
A
W
W/°C
V
V/ns
°C
Typ.
–––
Max.
62.5
Units
°C/W
1
08/02/10


International Rectifier Electronic Components Datasheet

IRF7303QPBF Datasheet

Power MOSFET

No Preview Available !

IRF7303QPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
LS Internal Source Inductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
30 ––– ––– V VGS = 0V, ID = 250µA
––– 0.032 –––
––– ––– 0.050
––– ––– 0.080
V/°C
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 2.4A ƒ
VGS = 4.5V, ID = 2.0A ƒ
1.0 ––– ––– V VDS = VGS, ID = 250µA
5.2 ––– ––– S VDS = 15V, ID = 2.4A
––– ––– 1.0 µA VDS = 24V, VGS = 0V
––– ––– 25
VDS = 24V, VGS = 0V, TJ = 125 °C
––– ––– 100
––– ––– -100
––– ––– 25
nA
VGS = 20V
VGS = - 20V
ID = 2.4A
––– ––– 2.9 nC VDS = 24V
––– ––– 7.9
VGS = 10V, See Fig. 6 and 12 ƒ
––– 6.8 –––
VDD = 15V
––– 21 ––– ns ID = 2.4A
––– 22 –––
RG = 6.0
––– 7.7 –––
RD = 6.2Ω, See Fig. 10 ƒ
––– 4.0 –––
nH
Between lead tip
and center of die contact G
––– 6.0 –––
D
S
––– 520 –––
VGS = 0V
––– 180 ––– pF VDS = 25V
––– 72 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– 2.5
A
showing the
integral reverse
––– ––– 20
p-n junction diode.
G
D
S
––– ––– 1.0
––– 47 71
––– 56 84
V TJ = 25°C, IS = 1.8A, VGS = 0V ƒ
ns TJ = 25°C, IF = 2.4A
nC di/dt = 100A/µs ƒ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ ISD 2.4A, di/dt 73A/µs, VDD V(BR)DSS,
TJ 150°C
www.irf.com
ƒ Pulse width 300µs; duty cycle 2%.
„ Surface mounted on FR-4 board, t 10sec.
2


Part Number IRF7303QPBF
Description Power MOSFET
Maker International Rectifier
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