Datasheet4U Logo Datasheet4U.com

IRF7303QPBF - Power MOSFET

Description

These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of.

📥 Download Datasheet

Datasheet preview – IRF7303QPBF

📁 Similar Datasheet

  • IRF730 - PowerMOS transistor (NXP)
  • IRF730 - N-Channel Power MOSFET (STMicroelectronics)
  • IRF730 - N-Channel Power MOSFET (Intersil Corporation)
  • IRF730 - N-Channel Power MOSFET (Fairchild Semiconductor)
  • IRF730 - N-Channel MOSFET (NTE)
  • IRF730 - Power MOSFET (Vishay)
  • IRF730 - N-Channel Power MOSFET (nELL)
  • IRF730 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • IRF730 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Advanced Power Electronics)
  • IRF730A - Power MOSFET (Vishay)
Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
l Advanced Process Technology l Ultra Low On-Resistance l Dual N Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free Description These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications.
Published: |