Datasheet Summary
l Generation V Technology l Ultra Low On-Resistance l Dual N-Channel Mosfet
S1 l Surface Mount
G1 l Available in Tape & Reel l Dynamic dv/dt Rating
S2 l Fast Switching
G2 l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and...