IRF7303PbF Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a...
IRF7303PbF Key Features
- Ultra Low On-Resistance
- Dual N-Channel Mosfet S1
- Surface Mount G1
- Available in Tape & Reel
- Dynamic dv/dt Rating S2
- Fast Switching G2