Datasheet Details
| Part number | IRF7303PbF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 230.51 KB |
| Description | Power MOSFET |
| Datasheet | IRF7303PbF-InternationalRectifier.pdf |
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Overview: l Generation V Technology l Ultra Low On-Resistance l Dual N-Channel Mosfet S1 l Surface Mount G1 l Available in Tape & Reel l Dynamic dv/dt Rating S2 l Fast Switching G2 l.
| Part number | IRF7303PbF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 230.51 KB |
| Description | Power MOSFET |
| Datasheet | IRF7303PbF-InternationalRectifier.pdf |
|
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|
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.
Compare IRF7303PbF distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
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