di/dt D.U.T. VDS Waveform Diode Recovery dv/dt [ VDD] Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% [ISD ] *** VGS = 5.0V for Logic Level.

The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capabil.

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET .

IRF730

IRF7301

IRF7301PBF

IRF7303

IRF7303PbF

IRF7303QPBF

IRF7304

IRF7304PBF

IRF7304QPBF

IRF7306QPBF

IRF7307

IRF7307PbF

IRF7307QPBF