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IRF730 - N-Channel MOSFET

Features

  • D Repetitive Avalanche Rated D Dynamic dv/dt Rating D Fast Switching D Simple Drive Requirements D Ease of Paralleling G S Absolute Maximum Ratings: (TC = +25C unless otherwise specified) Drain.
  • Source Voltage, VDS.
  • . . 400V Gate.
  • Source Voltage, VGS.
  • . . 20V Continuous Drain Current.

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Datasheet Details

Part number IRF730
Manufacturer NTE Electronics (defunct)
File Size 67.60 KB
Description N-Channel MOSFET
Datasheet download datasheet IRF730 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRF730 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−220 Type Package D Features: D Repetitive Avalanche Rated D Dynamic dv/dt Rating D Fast Switching D Simple Drive Requirements D Ease of Paralleling G S Absolute Maximum Ratings: (TC = +25C unless otherwise specified) Drain−Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Continuous Drain Current (VGS = 10V), ID TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5A TC = +100C . . . . . . . . . . . .
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