IRF730 Datasheet | Specifications & PDF Download

IRF730 N-channel 400V - 0.75Ω - 5.5A TO-220 Powermesh™II Power MOSFET General features Type IRF730 VDSS 400V RDS(on) <1Ω ID 5.5A ■ Exceptional d

(12 views)

IRF730 Data Sheet July 1999 File Number 1580.5 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power

(3 views)

www.vishay.com IRF730 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs

(3 views)

Advanced Power Electronics Corp. ▼ Ease of Paralleling ▼ Fast Switching Characteristic ▼ Simple Drive Requirement IRF730 RoHS-compliant Product N-CHA

(3 views)

  AUTOMOTIVE GRADE AUIRF7303Q Features  Advanced Planar Technology  Dual N Channel MOSFET  Low On-Resistance  Logic Level Gate Drive  Dynamic

(2 views)

Philips Semiconductors Product specification PowerMOS transistor Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Hig

(2 views)

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200406 Issued Date : 2004.10.01 Revised Date : 2005.04.22 Page No. : 1/4 HIRF730 / HIRF730F N-CHA

(2 views)

PD - 97655A AUTOMOTIVE GRADE Features l l l l l l l l AUIRF7309Q HEXFET® Power MOSFET S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2 3 4 7 6 5 Advanced Planar

(2 views)

SEMICONDUCTOR IRF730 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (5.5A, 400Volts) DESCRIPTION The Nell IRF730 are N-Channel enh

(2 views)

IRF730 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−220 Type Package D Features: D Repetitive Avalanche Rated D Dynamic dv/dt Rating

(2 views)

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=3.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistan

(1 views)

IRF730PBF ® Pb Free Plating Product Features ■ RDS(on) (Max 1 Ω )@VGS=10V ■ Gate Charge (Typical 32nC) ■ Improved dv/dt Capability ■ High ruggedness

(1 views)

  Features  Advanced Planar Technology  Low On-Resistance  Dual P Channel MOSFET  Dynamic dv/dt Rating  Logic Level  150°C Operating Temperature

(1 views)

  Features  Advanced Planar Technology  Low On-Resistance  Logic Level Gate Drive  Dual N and P Channel MOSFET  Dynamic dv/dt Rating  150°C Oper

(1 views)

VDS RDS(on) max (@VGS = 10V) Qg (max) ID (@TA = 25°C) N-CH 30 0.05 25 4.0 P-CH -30 0.10 25 -3.0 V V Ω nC A IRF7309TRPbF-1 HEXFET® Power MOSFET SO-

(1 views)

(1 views)

PD - 9.1238C IRF7301 HEXFET® Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet Surface Mount Availabl

(1 views)

PD - 9.1239D IRF7303 HEXFET® Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual N-Channel Mosfet l Surface Mount l Available in Tape

(1 views)

PD - 9.1241C IRF7306 HEXFET® Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual P-Channel Mosfet Surface Mount Availabl

(1 views)

l Generation V Technology l Ultra Low On-Resistance l Dual N and P Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l

(1 views)