IRF730 Datasheet | Specifications & PDF Download

IRF730 N-channel 400V - 0.75Ω - 5.5A TO-220 Powermesh™II Power MOSFET General features Type IRF730 VDSS 400V RDS(on) <1Ω ID 5.5A ■ Exceptional d

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200406 Issued Date : 2004.10.01 Revised Date : 2005.04.22 Page No. : 1/4 HIRF730 / HIRF730F N-CHA

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www.vishay.com IRF730 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs

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  AUTOMOTIVE GRADE AUIRF7303Q Features  Advanced Planar Technology  Dual N Channel MOSFET  Low On-Resistance  Logic Level Gate Drive  Dynamic

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IRF730 Data Sheet July 1999 File Number 1580.5 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power

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l Advanced Process Technology l Ultra Low On-Resistance l Dual N Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperatu

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SEMICONDUCTOR IRF730 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (5.5A, 400Volts) DESCRIPTION The Nell IRF730 are N-Channel enh

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PD - 9.1239D IRF7303 HEXFET® Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual N-Channel Mosfet l Surface Mount l Available in Tape

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Advanced Power Electronics Corp. ▼ Ease of Paralleling ▼ Fast Switching Characteristic ▼ Simple Drive Requirement IRF730 RoHS-compliant Product N-CHA

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Philips Semiconductors Product specification PowerMOS transistor Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Hig

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l Generation V Technology l Ultra Low On-Resistance l Dual N and P Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l

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l Generation V Technology l Ultra Low On-Resistance l Dual N-Channel Mosfet S1 l Surface Mount G1 l Available in Tape & Reel l Dynamic dv/dt Ra

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  Features  Advanced Planar Technology  Low On-Resistance  Logic Level Gate Drive  Dual N and P Channel MOSFET  Dynamic dv/dt Rating  150°C Oper

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AUTOMOTIVE GRADE PD - 97654C AUIRF7303Q Features l l l l l l l l HEXFET® Power MOSFET S1 G1 S2 G2 1 2 8 7 Advanced Planar Technology Dual N Channe

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PD - 96104A IRF7304QPbF l Advanced Process Technology l Ultra Low On-Resistance l Dual P Channel MOSFET l Surface Mount l Available in Tape & Reel l

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AUTOMOTIVE GRADE PD - 97653A AUIRF7304Q Features l l l l l l l l l Advanced Planar Technology Low On-Resistance Dual P Channel MOSFET Dynamic dV/dT

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• Lead-Free PD - 94977 IRF730PbF www.irf.com 1 02/03/04 IRF730PbF 2 www.irf.com IRF730PbF www.irf.com 3 IRF730PbF 4 www.irf.com IRF730PbF ww

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IRF730AS, SiHF730AS, IRF730AL, SiHF730AL www.vishay.com Vishay Siliconix Power MOSFET D I2PAK (TO-262) D2PAK (TO-263) G DS G D S G S N-Chan

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MOSFET IRF730 N-channel mosfet transistor INCHANGE ‹ Features With TO-220 package Simple drive requirements Fast switching V DSS=400V; RDS(ON)1.0 ;

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