Datasheet Summary
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PD- 91789
PRELIMINARY Co-packaged HEXFET® Power MOSFET and Schottky Diode Ideal for Mobile Phone Applications Generation V Technology SO-8 Footprint
FETKY™ MOSFET / Schottky Diode l l l l
VDSS = -20V RDS(on) = 0.18Ω Schottky Vf = 0.39V
T op V ie w
Description
The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. bining this technology with International Rectifier's low forward drop Schottky...