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IRF7324D1 - FETKY MOSFET / Schottky Diode

Description

The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications.

Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • IN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GE.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com PD- 91789 PRELIMINARY Co-packaged HEXFET® Power MOSFET and Schottky Diode Ideal for Mobile Phone Applications Generation V Technology SO-8 Footprint IRF7324D1 8 FETKY™ MOSFET / Schottky Diode l l l l A A S G 1 K K D D 2 7 VDSS = -20V RDS(on) = 0.18Ω Schottky Vf = 0.39V 3 6 4 5 T op V ie w Description The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
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