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IRF7324PBF - HEXFET Power MOSFET

Description

New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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www.DataSheet4U.com PD - 95460 IRF7324PbF HEXFET® Power MOSFET Trench Technology Ultra Low On-Resistance ● Dual P-Channel MOSFET ● Low Profile (<1.1mm) ● Available in Tape & Reel ● 2.5V Rated ● Lead-Free ● ● S1 G1 S2 G2 1 2 3 4 8 7 D1 D1 D2 D2 VDSS = -20V RDS(on) = 0.018Ω 6 5 Description New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications.
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