Datasheet Details
| Part number | IRF7338PBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 250.52 KB |
| Description | HEXFET Power MOSFET |
| Download |
IRF7338PBF Download (PDF)
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| Part number | IRF7338PBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 250.52 KB |
| Description | HEXFET Power MOSFET |
| Download |
IRF7338PBF Download (PDF)
|
|
|
|
These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.
This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
This Dual SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.
PD - 95197 IRF7338PbF HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2 3 4 7 D1 D1 D2 D2 N-Ch VDSS 12V P-Ch -12V 6 5 P-CHANNEL MOSFET RDS(on) 0.034Ω 0.
| Part Number | Description |
|---|---|
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