Datasheet Details
| Part number | IRF7350PBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 334.45 KB |
| Description | Power MOSFET |
| Datasheet |
 IRF7350PBF Datasheet
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General Description
These dual N and P channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Key Features
- veforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = t av.
- f ZthJ.