threshold voltage has been reached and the time the drain current rises to Idmax at which time the drain voltage begins to change. Minimizing Qgs2 is a critical factor in reducing switching losses in Q1.
Qoss is the charge that must be supplied to the output capacitance of the MOSFET during every switching cycle. Figure A shows how Qoss is formed by the parallel combination of the voltage dependant (nonlinear) capacitances Cds and Cdg when multiplied by the power supply input buss voltage. 8.
Full PDF Text Transcription for IRF7351PbF (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IRF7351PbF. For precise diagrams, and layout, please refer to the original PDF.
Applications l Synchronous Rectifier MOSFET for Isolated DC-DC Converters l Low Power Motor Drive Systems PD - 97436 IRF7351PbF HEXFET® Power MOSFET VDSS RDS(on) max Qg (...
View more extracted text
stems PD - 97436 IRF7351PbF HEXFET® Power MOSFET VDSS RDS(on) max Qg (typ.) 60V 17.8mΩ@VGS = 10V 24nC Benefits l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l 20V VGS Max.
More Datasheets from International Rectifier (now Infineon)
IRF7351PbF Datasheet
