IRF7350 Datasheet | International Rectifier

- 94226B HEXFET® Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape and Reel S1 G1 S2 G2 - C H A N N EL M O S FE T 1 8 2 7 D1 D1 N-Ch VDSS 100V P-Ch -100V 0.48Ω D2 D2 P -C H A N N E L M O S F E T RDS(on) 0.21Ω T op V iew Description These dual N and P channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device...