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IRF7350 - Power MOSFET

Datasheet Summary

Description

These dual N and P channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = t av.

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Full PDF Text Transcription

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PD - 94226B IRF7350 HEXFET® Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape and Reel S1 G1 S2 G2 N - C H A N N EL M O S FE T 1 8 2 7 D1 D1 N-Ch VDSS 100V P-Ch -100V 0.48Ω 3 6 D2 D2 4 5 P -C H A N N E L M O S F E T RDS(on) 0.21Ω T op V iew Description These dual N and P channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in DC motor drives and load management applications.
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