IRF7350PBF - Power MOSFET

Product Overview

International Rectifier

Datasheet Details

Part number	IRF7350PBF
Manufacturer	International Rectifier
File Size	334.45 KB
Description	Power MOSFET
Datasheet	IRF7350PBF Datasheet
Additional preview pages of the IRF7350PBF datasheet.

Product details

Description

These dual N and P channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

veforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = t av.
f ZthJ.

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Published: Aug 28, 2007 |