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IRF7413PBF - HEXFET Power MOSFET

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • 2Ã9@TDBI6U@TÃG@69AS@@ QSP9V8UÃPQUDPI6G `Ã2ÃG6TUÃ9DBDUÃPAÃUC@Ã`@6S XXÃ2ÃX@@F 6Ã2Ã6TT@H7G`ÃTDU@Ã8P9@ GPUÃ8P9@ Q6SUÃIVH7@S IRF7413PbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches).

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF7413PBF-1 Power MOSFET
IRF7413 Power MOSFET
IRF7413A Power MOSFET
IRF7413Z HEXFET Power MOSFET
IRF7413ZPBF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com PD - 95017A IRF7413PbF l l l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching 100% RG Tested Lead-Free HEXFET® Power MOSFET S S S G 1 8 A A D D D D 2 7 VDSS = 30V RDS(on) = 0.011Ω 3 6 4 5 Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
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