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IRF7413A Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 9.1613A PRELIMINARY Generation V Technology l Ultra Low On-Resistance l N-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast.

General Description

l A A D D D D IRF7413A HEXFET® Power MOSFET 1 2 8 7 S S S G VDSS = 30V RDS(on) = 0.0135Ω 3 6 4 5 T op V iew Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.

Key Features

  • ONAL.

IRF7413A Distributor