Datasheet Summary
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- 95017A
IRF7413PbF l l l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching 100% RG Tested Lead-Free
HEXFET® Power MOSFET
1 8
A A D D D D
VDSS = 30V RDS(on) = 0.011Ω
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Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for...