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PD - 95335D
Applications l Control FET for Notebook Processor
Power l Control and Synchronous Rectifier
MOSFET for Graphics Cards and POL Converters in Computing, Networking and Telecommunication Systems
Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage
and Current l 100% Tested for RG l Lead-Free
Absolute Maximum Ratings
Parameter
VDS
Drain-to-Source Voltage
VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C
Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V
c Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation Power Dissipation
TJ TSTG
Linear Derating Factor Operating Junction and Storage Temperature Range
IRF7413ZPbF
VDSS
30V
HEXFET® Power MOSFET
RDS(on) max
ID
: 10m @VGS = 10V 13A
IRF7413ZPBF Datasheet
