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IRF7413ZUPBF - HEXFT Power MOSFET

Key Features

  • as. Under light load the MOSFET must still be turned on and off by the control IC so the gate drive losses become much more significant. Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs’ susceptibility to Cdv/dt turn on. The drain of Q2 is connected to the switching node of the converter and therefore sees transitions between ground and Vin. As.

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Other Datasheets by International Rectifier (now Infineon)

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IRF7413Z HEXFET Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 96069A IRF7413ZUPbF HEXFET® Power MOSFET Applications l Control FET for Notebook Processor Power l Control and Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Computing, Networking and Telecommunication Systems Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG l Lead-Free VDSS 30V RDS(on) max 10m @VGS = 10V A A D D D D : ID 13A S S S G 1 2 3 4 8 7 6 5 Top View SO-8 www.DataSheet4U.