( .1 6 7 ) ( . 2 08 ) R E C O M M E N D E D F O O T P R IN T 1 .0 4 ( .0 4 1 ) 8X 0 .3 8 8 X ( .0 1 5 ) L θ IN C H E S M IN .0 3 6 .0 0 4 .0 1 0 .0 0 5 .1 1 6 MAX .0 4 4.

The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in.

l S1 G1 S2 G2 1 8 D1 D1 D2 D2 2 7 VDSS = -30V RDS(on) = 0.27Ω 3 6 4 5 T o p V iew Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This ben.

IRF750

IRF7501

IRF7501PBF

IRF7503

IRF7503PBF

IRF7504

IRF7504PBF

IRF7506PBF

IRF7507

IRF7507PBF

IRF7509

IRF7509PBF

IRF7509PBF-1

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