power mosfet.
. 0 04 . 0 10 .0 0 5 .1 1 6 MAX .0 4 4 .0 0 8 .0 1 4 .0 0 7 .1 2 0 M IL LI M E T E R S M IN 0 .9 1 0 .1 0 0 .2 5 0 .1 3 2 .9 5 MAX 1 . 11 0 . 20 0 . 36 0 .1 8 3 .0 5
. .
The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power .
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