Datasheet4U Logo Datasheet4U.com

IRF7506 - Power MOSFET

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • F EE D D IR E C T IO N N O TE S : 1 . O U TLIN E CO N FO R M S TO E IA -48 1 & EIA- 541 . 2 . C O NTRO L LIN G D IM E NSIO N : MILL IM ETE R. 3 30. 00 (12 .99 2) M A X. 14 .40 ( .56 6 ) 12 .40 ( .48 8 ) NO TE S : 1. C O N T R O LLIN G D IM EN SIO N : M ILL IM E T ER . 2. O U T LIN E C O N F O R M S T O E IA -481 & EIA -54 1. WORLD.

📥 Download Datasheet

Datasheet preview – IRF7506

📁 Similar Datasheet

  • IRF750 - Advanced Power MOSFET (Fairchild Semiconductor)
  • IRF750A - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • IRF750A - Advanced Power MOSFET (Fairchild Semiconductor)
  • IRF710 - N-Channel Power MOSFET (Intersil Corporation)
  • IRF710 - N-Channel MOSFET (INCHANGE)
  • IRF710 - N-Channel MOSFET (ART CHIP)
  • IRF710 - Power MOSFET (Vishay)
  • IRF710A - N-Channel Mosfet Transistor (Inchange Semiconductor)
  • IRF710A - Advanced Power MOSFET (Fairchild Semiconductor)
  • IRF710B - 400V N-Channel MOSFET (Fairchild Semiconductor)
Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
PD - 9.1268F IRF7506 HEXFET® Power MOSFET Generation V Technology l Ultra Low On-Resistance l Dual P-Channel MOSFET l Very Small SOIC Package l Low Profile (<1.1mm) l Available in Tape & Reel l Fast Switching Description l S1 G1 S2 G2 1 8 D1 D1 D2 D2 2 7 VDSS = -30V RDS(on) = 0.27Ω 3 6 4 5 T o p V iew Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Published: |