IRF750 Datasheet | Fairchild Semiconductor

FEATURES - Avalanche Rugged Technology - Rugged Gate Oxide Technology - Lower Input Capacitance - Improved Gate Charge - Extended Safe Operating Area - Lower Leakage Current: 10µA (Max.) @ VDS = 400V - Low RDS(ON): 0.254Ω (Typ.) Absolute Maximum Ratings Symbol VDSS IDM VGS EAS IAR EAR dv/dt TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed (1) Gate-to-Source Voltage Single Pulsed Avalanche Energy (2) Avalanche Current (1) Repetitive Avalanche Energy (1) Peak Diode Recovery dv/dt (3) Total Power Dissipation (TC=25°C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds Thermal Resistance Symbol RθJC RθCS RθJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient...