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IRF7506 - Power MOSFET

General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • F EE D D IR E C T IO N N O TE S : 1 . O U TLIN E CO N FO R M S TO E IA -48 1 & EIA- 541 . 2 . C O NTRO L LIN G D IM E NSIO N : MILL IM ETE R. 3 30. 00 (12 .99 2) M A X. 14 .40 ( .56 6 ) 12 .40 ( .48 8 ) NO TE S : 1. C O N T R O LLIN G D IM EN SIO N : M ILL IM E T ER . 2. O U T LIN E C O N F O R M S T O E IA -481 & EIA -54 1. WORLD.

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Full PDF Text Transcription for IRF7506 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IRF7506. For precise diagrams, and layout, please refer to the original PDF.

PD - 9.1268F IRF7506 HEXFET® Power MOSFET Generation V Technology l Ultra Low On-Resistance l Dual P-Channel MOSFET l Very Small SOIC Package l Low Profile (<1.1mm) l Ava...

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-Channel MOSFET l Very Small SOIC Package l Low Profile (<1.1mm) l Available in Tape & Reel l Fast Switching Description l S1 G1 S2 G2 1 8 D1 D1 D2 D2 2 7 VDSS = -30V RDS(on) = 0.27Ω 3 6 4 5 T o p V iew Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

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