IRF750A Datasheet | Fairchild Semiconductor

FEATURES - Avalanche Rugged Technology - Rugged Gate Oxide Technology - Lower Input Capacitance - Improved Gate Charge - Extended Safe Operating Area - Lower Leakage Current : 10 µA (Max.) @ VDS = 400V - Low RDS(ON) : 0.254 Ω (Typ.) BVDSS = 400 V RDS(on) = 0.3 Ω ID = 15 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25°C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds (2) (1) (1) (3) (1) Value 400 15 9.5 60 ±30 1157 15 15.6 4.0 156 1.25 - 55 to +150 Units V A A V m J A m J V/ns W W/°C °C 300 Thermal Resistance Symbol RθJC RθCS RθJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -Max. 0.8 -62.5 °C/W Units Electrical Characteristics (TC=25°C unless otherwise specified) Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain (“Miller”) Charge Min. Typ. Max. Units 400 -2.0 -----------------0.46 ------11.1 --4.0 100 -100 10 100 0.3 -µA Ω Ω V V n A N-CHANNEL POWER MOSFET Test Condition VGS=0V,ID=250µA See Fig 7 VDS=5V,ID=250µA VGS=30V VGS=-30V VDS=400V VDS=320V,TC=125°C VGS=10V,ID=7.5A VDS=50V,ID=7.5A (4)...