Full PDF Text Transcription for IRF7507PBF (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IRF7507PBF. For precise diagrams, and layout, please refer to the original PDF.
PD - 95218 IRF7507PbF HEXFET® Power MOSFET l Generation V Technology l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Very Small SOIC Package l Low Profile (<1.1...
View more extracted text
l N and P Channel MOSFET l Very Small SOIC Package l Low Profile (<1.1mm) l Available in Tape & Reel l Fast Switching l Lead-Free N-CHANNEL MOSFET S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 P-CHANNEL MOSFET Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. N-Ch P-Ch VDSS
More Datasheets from International Rectifier (now Infineon)
IRF7507PBF Datasheet
