IRF7507 - Power MOSFET

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

• 00 6 C oss 200 4 C rs s 100 2 0 1 10 100 A 0 0 2 4 FOR TES T C IR C U IT SE E FIG U R E 19 6 8 10 A -V D S , D rain-to-S ource V oltage (V ) Q G , Total G ate C h arge (nC ) Fig 19. Typical Capacitance Vs. Drain-to-Source Voltage N-P - Channel 1000 Fig 20. Typical Gate Charge Vs. Gate-to-Source Voltage Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (.