Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Features
- 00
6
C oss
200
4
C rs s
100
2
0 1 10 100
A
0 0 2 4
FOR TES T C IR C U IT SE E FIG U R E 19
6 8 10
A
-V D S , D rain-to-S ource V oltage (V )
Q G , Total G ate C h arge (nC )
Fig 19. Typical Capacitance Vs. Drain-to-Source Voltage
N-P - Channel
1000
Fig 20. Typical Gate Charge Vs. Gate-to-Source Voltage
Thermal Response (Z thJA )
100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (.
IRF7507 Datasheet
