IRF7507 Datasheet | International Rectifier

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. M icro 8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS VGSM dv/dt TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS Continuous Drain Current, VGS Pulsed Drain Current Maximum Power Dissipation- Maximum Power Dissipation- Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp<10µS Peak Diode Recovery dv/dt ‚ Junction and Storage Temperature Range Soldering Temperature, for 10 seconds N-Channel 20 2.4 1.9 19 1.25 0.8 10 ± 12 16 5.0 -5.0 -55 to + 150 240 (1.6mm from case) Max. P-Channel -20 -1.7 -1.4 -14 Units V A W W m W/°C V V V/ns °C Thermal Resistance Parameter RθJA Maximum Junction-to-Ambient - Max. Units °C/W .irf. 12/1/98 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage Min. Typ. Max. Units Conditions N-Ch 20 - - VGS = 0V, ID = 250µA V P-Ch -20 - - VGS = 0V, ID = -250µA N-Ch - 0.041 - Reference to 25°C, ID = 1m A V/°C P-Ch - -0.012 - Reference to 25°C, ID = -1m A - 0.085 0.14 VGS = 4.5V, ID = 1.7A - N-Ch - 0.120 0.20 VGS = 2.7V, ID = 0.85A - Ω - 0.17 0.27 VGS = -4.5V, ID =-1.2A- P-Ch -...