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IRF750A - N-Channel MOSFET Transistor

Key Features

  • RDS(on) =0.3Ω.
  • 15A and 400V.
  • single pulse avalanche energy rated.
  • SOA is Power- Dissipation Limited.
  • Linear Transfer Characteristics.
  • High Input Impedance isc Product Specification IRF750A.

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INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·FEATURES ·RDS(on) =0.3Ω ·15A and 400V ·single pulse avalanche energy rated ·SOA is Power- Dissipation Limited ·Linear Transfer Characteristics ·High Input Impedance isc Product Specification IRF750A ·DESCRITION ·Designed for high speed applications, such as switching power supplies , AC and DC motor controls ,relay and solenoid drivers and other pulse. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 400 ±30 V V ID Drain Current-Continuous 15 A IDM Drain Current-Single Plused 60 A PD Total Dissipation @TC=25℃ 156 W Tj Max.