IRF750A Datasheet and Specifications PDF

INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·FEATURES ·RDS(on) =0.3Ω ·15A and 400V ·single pulse avalanche energy rated ·SOA is Power- Dissipation Limited ·Linear Transfer Characteristics ·.

*RDS(on) =0.3Ω
*15A and 400V
*single pulse avalanche energy rated
*SOA is Power- Dissipation Limited
*Linear Transfer Characteristics
*High Input Impedance isc Product Specification IRF750A
*DESCRITION
*Designed for high speed applications, such as switching power supplies , AC and DC motor contro.

Advanced Power MOSFET FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower.

* Avalanche Rugged Technology
* Rugged Gate Oxide Technology
* Lower Input Capacitance
* Improved Gate Charge
* Extended Safe Operating Area
* Lower Leakage Current : 10 µA (Max.) @ VDS = 400V
* Low RDS(ON) : 0.254 Ω (Typ.) IRF750A BVDSS = 400 V RDS(on) = 0.3 Ω ID = 15 A TO-220 1 2 3 1.Gate 2. Dr.