IRF7501PBF Datasheet - International Rectifier

IRF7501PBF Power MOSFET

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer .

IRF7501PBF Features

* K P = DES IGNAT ES LEAD - FREE PRODUCT (OPTIONAL) PART NUMBER WW = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR YEAR 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 Y 1 2 3 4 5 6 7 8 9 0 WORK WEEK 01 02 03 04 W A B C D WW = (27-52) IF PRECEDED BY A LET T ER YEAR 2001 2002 2003 2004 2005 2

IRF7501PBF_InternationalRectifier.pdf