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IRF7503 Power MOSFET

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Description

PD - 9.1266G IRF7503 HEXFET® Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Packag.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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Features

* E R . 33 0.00 (12.992) M AX. 14.40 ( .566 ) 12.40 ( .488 ) NO T ES : 1. CO NT RO LLIN G DIMEN SIO N : MILLIME T ER. 2. O UT LINE CO NF O RM S T O E IA- 48 1 & EIA-541. WORLD HEADQUARTERS: 233 Kansas St. , El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted,

Applications

* The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (

IRF7503 Distributors

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Power MOSFET International Rectifier
International Rectifier IRF7503-like datasheet