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IRF7501 Power MOSFET

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Description

PD - 91265H PRELIMINARY l l l l l l l IRF7501 HEXFET® Power MOSFET 8 7 Generation V Technology Ulrtra Low On-Resistance Dual N-Channel MOSFET Very S.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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Features

* om 7

Applications

* The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (

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Power MOSFET International Rectifier
International Rectifier IRF7501-like datasheet