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IRF7504 Power MOSFET

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Description

PD - 9.1267G IRF7504 HEXFET® Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Packag.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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Features

* ons are shown in millimeters (inches) T E R M IN A L N U M B E R 1 12 .3 ( .4 8 4 ) 11 .7 ( .4 6 1 ) 8 .1 ( .3 1 8 ) 7 .9 ( .3 1 2 ) F E E D D I R E C T IO N N O TE S : 1 . O U TL IN E C O N FO R M S TO E IA -4 81 & E IA -5 4 1. 2 . C O N TR O LL IN G D IM E N S IO N : M IL L IM E TE R . 3 30 .

Applications

* The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (

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