IRF7521D1 mosfet equivalent, fetky mosfet.
ward Drop V FM F ( V)
Fig. 12 -Typical Forward Voltage Drop Characteristics
A
A v era ge Forw ard C urrent - I F(AV ) (A )
Fig.14 - Maximum Allowable Ambient Temp. Vs.
Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Co.
T op V ie w
The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extr.
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