IRF7524D1 mosfet equivalent, fetky mosfet.
= 1/3 = 1/4 = 1/5 DC V r = 20V R t h JA = 100°C /W Square wave
0.1 0.0 0.2 0.4 0.6 0.8 1.0
Forward Voltage F orwa rd V oltage Drop D ro p -- V V FF(V) M (V )
A
Fig. 1.
Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Co.
T op V ie w
The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extr.
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