Datasheet4U Logo Datasheet4U.com

IRF7703GPBF - Power MOSFET

Description

HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • signed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. IR WORLD.

📥 Download Datasheet

Datasheet preview – IRF7703GPBF

📁 Similar Datasheet

  • IRF7704TRPBF - Dual P-Channel MOSFET (VBsemi)
  • IRF7769L1 - Power MOSFET (Infineon)
  • IRF7769L1TRPbF - Power MOSFET (Infineon)
  • IRF710 - N-Channel Power MOSFET (Intersil Corporation)
  • IRF710 - N-Channel MOSFET (INCHANGE)
  • IRF710 - N-Channel MOSFET (ART CHIP)
  • IRF710 - Power MOSFET (Vishay)
  • IRF710A - N-Channel Mosfet Transistor (Inchange Semiconductor)
  • IRF710A - Advanced Power MOSFET (Fairchild Semiconductor)
  • IRF710B - 400V N-Channel MOSFET (Fairchild Semiconductor)
Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
PD- 96148A IRF7703GPbF l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile (< 1.2mm) Available in Tape & Reel Lead-Free Halogen-Free ! " # HEXFET® Power MOSFET VDSS -40V RDS(on) max (mW) 28@VGS = -10V 45@VGS = -4.5V ID -6.0A -4.8A Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the de- 9 B T 'Ã2Ã9 &Ã2ÃT %Ã2ÃT $Ã2Ã9 ' & % $ signer with an extremely efficient and reliable device for battery and load management. The TSSOP-8 package has 45% less footprint area than the standard SO-8.
Published: |