900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




International Rectifier Electronic Components Datasheet

IRF7750 Datasheet

Power MOSFET

No Preview Available !

l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Very Small SOIC Package
l Low Profile ( < 1.1mm)
l Available in Tape & Reel
PD - 93848A
IRF7750
HEXFET® Power MOSFET
VDSS = -20V
TSSOP-8
RDS(on) = 0.030
Description
HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier
is well known for, provides the designer with an extremely efficient and reliable device for battery and load
management.
The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device
for applications where printed circuit board space is at a premium. The low profile (<1.1mm) allows it to fit easily into
extremely thin environments such as portable electronics and PCMCIA cards.
Absolute Maximum Ratings
VDS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
PD @TC = 70°C
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambientƒ
Max.
-20
±4.7
±3.8
±38
1.0
0.64
0.008
± 12
-55 to + 150
Units
V
A
W
W/°C
V
°C
Max.
125
Units
°C/W
1
5/25/2000


International Rectifier Electronic Components Datasheet

IRF7750 Datasheet

Power MOSFET

No Preview Available !

IRF7750
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
-20 ––– ––– V VGS = 0V, ID = -250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
––– 0.012 ––– V/°C
––– ––– 0.030
––– ––– 0.055
Reference to 25°C, ID = -1mA
VGS = -4.5V, ID = -4.7A ‚
VGS = -2.5V, ID = -3.8A ‚
VGS(th)
Gate Threshold Voltage
-0.45 ––– -1.2 V VDS = VGS, ID = -250µA
gfs Forward Transconductance
11 ––– ––– S VDS = -10V, ID = -4.7A
IDSS Drain-to-Source Leakage Current
––– ––– -1.0
––– ––– -25
µA
VDS = -20V, VGS = 0V
VDS = -16V, VGS = 0V, TJ = 70°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– -100 nA VGS = -12V
––– ––– 100
VGS = 12V
Qg Total Gate Charge
––– 26 39
ID = -4.7A
Qgs Gate-to-Source Charge
––– 3.9 5.8 nC VDS = -16V
Qgd Gate-to-Drain ("Miller") Charge
––– 8.0 12
VGS = -5.0V‚
td(on)
Turn-On Delay Time
––– 15 –––
VDD = -10V
tr
td(off)
Rise Time
Turn-Off Delay Time
––– 54 ––– ns ID = -1.0A
––– 180 –––
RD = 10
tf Fall Time
––– 210 –––
RG = 24‚
Ciss Input Capacitance
––– 1700 –––
VGS = 0V
Coss
Output Capacitance
––– 380 ––– pF VDS = -15V
Crss Reverse Transfer Capacitance
––– 270 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
Min.
–––
–––
–––
–––
–––
Typ. Max.
––– -1.0
––– -38
––– -1.2
26 39
16 24
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = -1.0A, VGS = 0V ‚
TJ = 25°C, IF = -1.0A
di/dt = 100A/µs ‚
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width 300µs; duty cycle 2%.
ƒ When mounted on 1 inch square copper board, t<10 sec
2 www.irf.com


Part Number IRF7750
Description Power MOSFET
Maker International Rectifier
PDF Download

IRF7750 Datasheet PDF






Similar Datasheet

1 IRF7750 Power MOSFET
International Rectifier
2 IRF7750GPBF Power MOSFET
International Rectifier
3 IRF7751 Power MOSFET
International Rectifier
4 IRF7751GPBF Power MOSFET
International Rectifier
5 IRF7751PbF Power MOSFET
International Rectifier
6 IRF7752 Power MOSFET
International Rectifier
7 IRF7752GPBF Power MOSFET
International Rectifier
8 IRF7754 Power MOSFET
International Rectifier
9 IRF7754GPBF Power MOSFET
International Rectifier





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy