IRF7751 - Power MOSFET
HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the de1 2 3 4 1= 2= 3= 4= D1 S1 S1 G1
