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International Rectifier Electronic Components Datasheet

IRF7757PbF Datasheet

Power MOSFET

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l Ultra Low On-Resistance
l Dual N-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.2mm)
l Available in Tape & Reel
l Common Drain Configuration
l Lead-Free
Description
HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for, provides the de-
signer with an extremely efficient and reliable device
for battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
VDSS
20V
PD-96018
IRF7757PbF
HEXFET® Power MOSFET
RDS(on) max (mW)
35@VGS = 4.5V
40@VGS = 2.5V
ID
4.8A
3.8A
1
2
3
4
1 = S1
2 = G1
3 = S2
4 = G2
8
7
6
5
8= D
7= D
6= D
5= D
TSSOP-8
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipationƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
20
4.8
3.9
19
1.2
0.76
9.5
± 12
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambientƒ
Max.
105
Units
°C/W
1
06/22/05


International Rectifier Electronic Components Datasheet

IRF7757PbF Datasheet

Power MOSFET

No Preview Available !

IRF7757PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
20 ––– –––
––– 0.013 –––
––– ––– 35
––– ––– 40
V
V/°C
m
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 4.5V, ID = 4.8A ‚
VGS = 2.5V, ID = 3.8A ‚
0.60 ––– 1.2 V VDS = VGS, ID = 250µA
11 ––– ––– S VDS = 10V, ID = 4.8A
––– ––– 1.0
––– ––– 25
µA
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 70°C
––– ––– 100 nA VGS = 12V
––– ––– -100
VGS = -12V
––– 15 23
ID = 4.8A
––– 2.5 ––– nC VDS = 16V
––– 4.8 –––
––– 9.5 –––
VGS = 4.5V
VDD = 10V ‚
––– 9.2 ––– ns ID = 1.0A
––– 36 –––
RG = 6.2
––– 14 –––
VGS = 4.5V
––– 1340 –––
––– 180 –––
VGS = 0V
pF VDS = 15V
––– 132 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min. Typ. Max. Units
––– ––– 1.2
––– ––– 19
––– –––
––– 20
––– 10
1.2
30
15
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
p-n junction diode.
TJ = 25°C, IS = 1.2A, VGS = 0V
TJ = 25°C, IF = 1.2A
di/dt = 100A/µs ‚
D
S
‚
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width 400µs; duty cycle 2%.
ƒ Surface mounted on 1 in square Cu board
2 www.irf.com


Part Number IRF7757PbF
Description Power MOSFET
Maker International Rectifier
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