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IRF7759L2PbF Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

General Description

The IRF7759L2TR/TR1PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile.

The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.

The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems.

Overview

IRF7759L2PbF l RoHS Compliant, Halogen Free  l Lead-Free (Qualified up to 260°C Reflow) l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  l Industrial Qualified DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) VDSS VGS RDS(on) 75V min ±20V max 1.8mΩ@ 10V Qg tot Qgd Vgs(th) 200nC 62nC 3.