IRF7805 IRF7805A Vds 30V 30V Rds(on) 11mΩ 11mΩ Qg 31nC 31nC Qsw 11.5nC Qoss 36nC 36nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continu.

These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC Converters that power the lat.

IRF7805

IRF7805PBF

IRF7805PbF

IRF7805PBF-1

IRF7805TRPbF-1

IRF7805ZPbF

IRF7805ZPBF-1

IRF7807

IRF7807A

IRF7807APbF

IRF7807APbF-1

IRF7807ATRPbF-1

IRF7807D1