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International Rectifier Electronic Components Datasheet

IRF7807TRPbF-1 Datasheet

HEXFET Chip-Set for DC-DC Converters

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IRF7807TRPbF-1 pdf
VDS
RDS(on) max
(@VGS = 4.5V)
Qg (typical)
ID
(@TA = 25°C)
IRF7807TRPbF-1
IRF7807ATRPbF-1
HEXFET® Chip-Set for DC-DC Converters
30 V
25 mΩ
12 nC
8.3 A
S1
S2
S3
G4
A
8D
7D
6D
5D
Top View
SO-8
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
IRF7807PbF-1
IRF7807APbF-1
Package Type
SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
4000
Orderable Part Number
IRF7807TRPbF-1
IRF7807ATRPbF-1
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
25°C
Current (VGS 4.5V)
Pulsed Drain Current
70°C
Power Dissipation
25°C
70°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed source Current
Symbol
VDS
VGS
ID
IDM
PD
TJ, TSTG
IS
ISM
IRF7807
IRF7807A
30
±12
8.3 8.3
6.6 6.6
66 66
2.5
1.6
–55 to 150
2.5 2.5
66 66
Units
V
A
W
°C
A
Thermal Resistance
Parameter
Maximum Junction-to-Ambientƒ
RθJA
Max.
50
Units
°C/W
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
October 16, 2014


International Rectifier Electronic Components Datasheet

IRF7807TRPbF-1 Datasheet

HEXFET Chip-Set for DC-DC Converters

No Preview Available !

IRF7807TRPbF-1 pdf
IRF7807/ATRPbF-1
Electrical Characteristics
Parameter
Drain-to-Source
Breakdown Voltage*
V(BR)DSS
Static Drain-Source
on Resistance*
RDS(on)
Gate Threshold Voltage*
Drain-Source Leakage
Current*
VGS(th)
IDSS
IRF7807
Min Typ Max
30 – –
17 25
1.0
30
150
IRF7807A
Min Typ Max Units
30 – – V
17 25 mΩ
1.0 V
30 μA
150
Conditions
VGS = 0V, ID = 250μA
VGS = 4.5V, ID = 7A‚
VDS = VGS, ID = 250μA
VDS = 24V, VGS = 0
VDS = 24V, VGS = 0,
Tj = 100°C
Gate-Source Leakage
Current*
IGSS
±100
±100 nA VGS = ±12V
Total Gate Charge*
Pre-Vth
Gate-Source Charge
Qg
Qgs1
12 17
2.1
12 17
2.1
VGS = 5V, ID = 7A
VDS = 16V, ID = 7A
Post-Vth
Gate-Source Charge
Qgs2
0.76
0.76 nC
Gate to Drain Charge
Switch Charge*
(Qgs2 + Qgd)
Output Charge*
Gate Resistance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Qgd
QSW
Qoss
Rg
td(on)
tr
td (off)
tf
2.9
3.66 5.2
14 16.8
1.2
12
17
25
6
2.9
3.66
14 16.8
1.2 Ω
12
17 ns
25
6
VDS = 16V, VGS = 0
VDD = 16V
ID = 7A
Rg = 2Ω
VRGeSs=ist4iv.5eVLoad
Source-Drain Rating & Characteristics
Parameter
Min Typ Max Min Typ Max Units
Conditions
Diode Forward
Voltage*
VSD
1.2 1.2 V IS = 7A‚, VGS = 0V
Reverse Recovery
Charge„
Qrr
80
80
Reverse Recovery
Charge (with Parallel
Qrr(s)
50
50
Schotkky)„
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Pulse width 300 μs; duty cycle 2%.
ƒ When mounted on 1 inch square copper board, t < 10 sec.
„
*
DTyepvi=cems eaarseu1re0d0%- Qteosssted to these parameters.
nC di/dt = 700A/μs
VDS = 16V, VGS = 0V, IS = 7A
di/dt = 700A/μs
(with 10BQ040)
VDS = 16V, VGS = 0V, IS = 7A
2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
October 16, 2014


Part Number IRF7807TRPbF-1
Description HEXFET Chip-Set for DC-DC Converters
Maker International Rectifier
Total Page 9 Pages
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IRF7807TRPbF-1 pdf
IRF7807TRPbF-1 Datasheet PDF
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