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IRF7807A - N-Channel Power MOSFET

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General Description

These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge.

The reduced conduction and switching losses make them ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors.

Overview

PD – 91747C IRF7807/IRF7807A HEXFET® Chip-Set for DC-DC Converters • • • • N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses S S S G 1 8 7 A D D D D 2 3.

Key Features

  • IRF7807 IRF7807A Vds 30V 30V Rds(on) 25mΩ 25mΩ Qg 17nC 17nC Qsw 5.2nC Qoss 16.8nC 16.8nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS ≥ 4.5V) Pulsed Drain Current Power Dissipation 25°C 70°C Junction & Storage Temperature Range Continuous Source Current (Body Diode) Pulsed source Current TJ, TSTG IS ISM 2.5 66 25°C 70°C IDM PD Symbol VDS VGS ID 8.3 6.6 66 2.5 1.6.
  • 55 to 150 2.5 66 °C A IRF7807 30 ±12 8.3 6.6 66 W A.

More Datasheets from International Rectifier (now Infineon)

Part Number Description
IRF7807APbF HEXFET Chip-Set for DC-DC Converters
IRF7807APbF-1 HEXFET Chip-Set for DC-DC Converters
IRF7807ATRPbF-1 HEXFET Chip-Set for DC-DC Converters
IRF7807 N-Channel Power MOSFET
IRF7807D1 MOSFET
IRF7807D1PBF HEXFET Power MOSFET
IRF7807D2 MOSFET
IRF7807D2PbF MOSFET / SCHOTTKY DIODE
IRF7807PbF HEXFET Chip-Set for DC-DC Converters
IRF7807PbF-1 HEXFET Chip-Set for DC-DC Converters