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IRF7807D2 - MOSFET

General Description

The FETKY™ family of Co-Pack HEXFET® MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications.

Overview

PD- 93762 IRF7807D2 FETKY™ MOSFET / SCHOTTKY DIODE • Co-Pack N-channel HEXFET® Power MOSFET and Schottky Diode • Ideal for Synchronous Rectifiers in DC-DC Converters up to 5A Output • Low Conduction Losses • Low.

Key Features

  • (Max Values) IRF7807D2 VDS RDS(on) Qg QSW Qoss 30V 25mΩ 14nC 5.2nC 21.6nC Junction & Storage Temperature Range Thermal Resistance Parameter Maximum Junction-to-Ambient.
  • RθJA Max. 50 Units °C/W www. irf. com 1 11/8/99 IRF7807D2 Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage.
  • Static Drain-Source on Resistance.
  • Drain-Source Leakage Current.
  • V(BR)DSS RDS(on) 1.0 90 7.2 Min 30 17 25 Typ Max Units V mΩ V µA mA Conditions VGS = 0V, ID = 250µA VGS = 4.5V, I.