Description
The FETKY™ family of Co-Pack HEXFET® MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications.
Features
- (Max Values)
IRF7807D2
VDS RDS(on) Qg QSW Qoss
30V 25mΩ 14nC 5.2nC 21.6nC
Junction & Storage Temperature Range Thermal Resistance Parameter Maximum Junction-to-Ambient.
- RθJA
Max. 50
Units °C/W
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11/8/99
IRF7807D2
Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage.
- Static Drain-Source on Resistance.
- Drain-Source Leakage Current.
- V(BR)DSS RDS(on) 1.0 90 7.2 Min 30 17 25 Typ Max Units V mΩ V µA mA Conditions VGS = 0V, ID = 250µA VGS = 4.5V, I.
IRF7807D2 Datasheet
