Description
The FETKY™ family of Co-Pack HEXFET®MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications.
Features
- (Max Values)
IRF7807D1
VDS RDS(on) Qg Qsw Qoss
30V 25mΩ 14nC 5.2nC 18.4nC
Junction & Storage Temperature Range
RθJA
www. irf. com
1
5/5/04
IRF7807D1PbF
Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage.
- Static Drain-Source on Resistance.
- Drain-Source Leakage Current.
- Gate-Source Leakage Current.
- Total Gate Charge Synch FET.
- Total Gate Charge Control FET.
- Pre-Vth Gate-Source Charge Post-Vth Gate-Source Charge Gate to Drain Charge Switch Charge.
IRF7807D1PBF Datasheet
